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PDF K3060 Data sheet ( Hoja de datos )
| Número de pieza | K3060 | |
| Descripción | N-CHANNEL POWER MOS FET | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3060
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3060 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low on-state resistance
RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A)
RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 35 A)
• Low Ciss: Ciss = 2400 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3060
TO-220AB
2SK3060-S
TO-262
2SK3060-ZJ
2SK3060-Z
TO-263
TO-220SMDNote
Note This package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
Gate to Source Voltage (VDS = 0 V)
VGSS(DC)
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
60
±20
+20, −10
±70
±210
70
1.5
150
–55 to +150
35
122.5
V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-220AB)
(TO-262)
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
5 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 V → 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13099EJ3V0DS00 (3rd edition)
Date Published April 2001 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1997,2000
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
30 VGS = 4.0 V
20 10 V
10
0 ID = 35 A
−50 0 50 100 150
Tch - Channel Temperature - ˚C
10000
1000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
100
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1 10
IF - Drain Current - A
100
2SK3060
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000 Pulsed
100
VGS = 10 V
10
VGS = 0 V
1
0.1
0 0.5 1.0
VSD - Source to Drain Voltage - V
1.5
10000
1000
100
SWITCHING CHARACTERISTICS
VDD = 30 V
VGS = 10 V
RG = 10 Ω
tr
tf
td(off)
td(on)
10
0.1
1 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50 ID = 70 A
18
40
VGS
30
VDD = 48 V
30 V
12 V
16
14
12
10
20 8
VDS
10
6
4
2
0
0 20 40 60 80
QG - Gate Charge - nC
Data Sheet D13099EJ3V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K3060.PDF ] | |
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