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PDF IXGH50N120C3 Data sheet ( Hoja de datos )
| Número de pieza | IXGH50N120C3 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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Preliminary Technical Information
GenX3TM 1200V IGBT
High speed PT IGBTs
for 20 - 50 kHz switching
IXGH50N120C3
VCES =
IC110
VCE(sat)
=
≤
tfi(typ) =
1200V
50A
4.2V
64ns
Symbol
VCES
VCGR
V
GES
VGEM
IC25
IC110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
T
stg
Md
TL
T
SOLD
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (limited by leads)
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE= 15V, TJ = 125°C, RG = 3Ω
Clamped inductive load @VCE≤ 1200V
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
75 A
50 A
250 A
40 A
750 mJ
ICM = 100
A
460
-55 ... +150
150
-55 ... +150
1.13 / 10
300
260
6
W
°C
°C
°C
Nm/lb.in.
°C
°C
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVCES
VGE(th)
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
ICES
VCE = VCES
VGE = 0V
TJ = 125°C
I
GES
VCE = 0V, VGE = ±20V
VCE(sat)
IC = 40A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1200
3.0
V
5.0 V
100 μA
2 mA
±100 nA
4.2 V
2.6 V
TO-247 (IXGH)
G
CE
TAB
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z International standard packages:
JEDEC TO-247AD
z IGBT and anti-parallel FRED in one
package
z MOS Gate turn-on
- drive simplicity
Applications
z AC motor speed control
z DC servo and robot drives
z DC choppers
z Uninterruptible power supplies (UPS)
z Switch-mode and resonant-mode
power supplies
© 2008 IXYS CORPORATION, All rights reserved
DS99996(06/08)
1 page  
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
6.0
5.5 Eoff
Eon - - - -
TJ = 125ºC , VGE = 15V
5.0 VCE = 600V
4.5
I C = 80A
4.0
12
11
10
9
8
3.5 7
3.0
2.5 I C = 40A
6
5
2.0 4
1.5 3
2 3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
4.0 11
3.6 Eoff
Eon - - - -
3.2 RG = 2Ω , VGE = 15V
VCE = 600V
2.8
I C = 80A
10
9
8
2.4 7
2.0 6
1.6 5
1.2 4
0.8 3
I C = 40A
0.4 2
0.0 1
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
450 260
400
tf
td(off) - - - -
240
350
RG = 2Ω , VGE = 15V
VCE = 600V
220
300 200
250 TJ = 125ºC
180
200 160
150 140
100
TJ = 25ºC
50
120
100
0 80
20 30 40 50 60 70 80
IC - Amperes
© 2008 IXYS CORPORATION, All rights reserved
IXGH50N120C3
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
4.5
4.0 Eoff
Eon - - - -
3.5
RG = 2Ω , VGE = 15V
VCE = 600V
3.0
2.5
TJ = 125ºC
2.0
1.5
1.0
0.5 TJ = 25ºC
0.0
20 30 40 50 60 70
IC - Amperes
9
8
7
6
5
4
3
2
1
0
80
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
500 600
450 t f
td(off) - - - -
400
TJ = 125ºC, VGE = 15V
VCE = 600V
350
550
500
450
300
I C = 40A
250
400
350
200 300
150
I C = 80A
250
100 200
50 150
0 100
2 3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
350 180
300 t f
td(off) - - - -
RG = 2Ω , VGE = 15V
250 VCE = 600V
I C = 40A
170
160
200 150
150 140
I C = 80A
100 130
50 120
0 110
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGH50N120C3.PDF ] | |
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