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PDF NGTG50N60FWG Data sheet ( Hoja de datos )
| Número de pieza | NGTG50N60FWG | |
| Descripción | IGBT | |
| Fabricantes | ON Semiconductor | |
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NGTG50N60FWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.
Features
• Optimized for Very Low VCEsat
• Low Switching Loss Reduces System Power Dissipation
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Solar Inverters
• Uninterruptible Power Supples (UPS)
• Motor Drives
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES 600 V
IC A
100
50
Pulsed collector current, Tpulse
limited by TJmax
Short−circuit withstand time
VGE = 15 V, VCE = 300 V,
TJ ≤ +150°C
Gate−emitter voltage
Transient Gate−Emitter Voltage
ICM 200 A
tSC 5 ms
VGE
$20
V
$30
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD W
223
89
Operating junction temperature
range
TJ −55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
50 A, 600 V
VCEsat = 1.50 V
C
G
E
G
C
E
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
G50N60F
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTG50N60FWG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2012
December, 2012 − Rev. 0
1
Publication Order Number:
NGTG50N60FW/D
1 page  
NGTG50N60FWG
TYPICAL CHARACTERISTICS
7
VCE = 400 V
6 VGE = 15 V
IC = 50 A
5 TJ = 150°C
Eon
4
3 Eoff
2
1
0
5 15 25 35 45 55 65 75
Rg, GATE RESISTOR (W)
Figure 12. Switching Loss vs. Rg
10,000
1000
td(off)
td(on)
100 tf
tr
10
VCE = 400 V
VGE = 15 V
IC = 50 A
1 TJ = 150°C
85 5 15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 13. Switching Time vs. Rg
3
VGE = 15 V
IC = 50 A
2.4 Rg = 10 W
TJ = 150°C
1.8
Eoff
Eon
1000
100
td(off)
tf
td(on)
tr
1.2
0.6
0
175 225 275 325 375 425 475 525
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Switching Loss vs. VCE
575
10 VGE = 15 V
IC = 50 A
Rg = 10 W
TJ = 150°C
1
175 225 275 325 375 425 475 525 575
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. VCE
1000
100
10
1 ms
dc operation
100 ms
50 ms
1000
100
1 Single Nonrepetitive
Pulse TC = 25°C
0.1
Curves must be derated
linearly with increase
in temperature
0.01
1
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Safe Operating Area
1000
10
VGE = 15 V, TC = 125°C
1
1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Reverse Bias Safe Operating Area
http://onsemi.com
5
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet NGTG50N60FWG.PDF ] | |
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