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PDF TF414 Data sheet ( Hoja de datos )

Número de pieza TF414
Descripción N-Channel JFET
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No Preview Available ! TF414 Hoja de datos, Descripción, Manual

Ordering number : ENA2259B
TF414
N-Channel JFET
40V, 50 to 130A, 0.11mS, SOT-883
http://onsemi.com
Features
Small IGSS : max 500pA (VGS= 20V, VDS=0V)
Small Ciss : typ 0.7pF (VDS=10V, VGS=0V, f=1MHz)
Ultrasmall package facilitates miniaturization in end products
Halogen free compliance
Applications
Impedance conversion, infrared sensor applications
Electrical Connection
3
1 : Source
2 : Drain
3 : Gate
1 2 Top view
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Value
Drain to Source Voltage
VDSS
40
Gate to Drain Voltage
VGDS
40
Gate Current
IG
10
Drain Current
ID
1
Power Dissipation
PD
100
Junction Temperature
Tj
150
Storage Temperature Tstg 55 to +150
This product is designed to “ESD immunity < 200V*”,
so please take care when handling. * Machine Model
Unit
V
V
mA
mA
mW
C
C
Marking
31
2
SOT-883
A4 M
M = Date Code
Ordering & Package Information
Device
TF414T5G
Pb-free and
Halogen Free
Package
SOT-883
Shipping
8,000
pcs. / reel
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta 25C
Parameter
Gate to Drain Breakdown Voltage
Gate to Source Leakage Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Symbol
Conditions
V(BR)GDS
IGSS
VGS(off)
IDSS
| yfs |
Ciss
Crss
IG = 10μA, VDS=0V
VGS = 20V, VDS=0V
VDS = 10V, ID = 1μA
VDS = 10V, VGS = 0V
VDS = 10V, VGS=0V, f = 1kHz
VDS = 10V, VGS = 0V, f = 1MHz
min
40
Value
typ
1.4
50
0.05 0.11
0.7
0.3
max
500
4.0
130
Unit
V
pA
V
A
mS
pF
pF
Semiconductor Components Industries, LLC, 2014
January, 2014
12814HK TC-00003085/D1813HK/D1113HK GB No.A2259-1/3

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