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Sanyo - N-Channel Silicon Junction FET

Numéro de référence TF410
Description N-Channel Silicon Junction FET
Fabricant Sanyo 
Logo Sanyo 





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TF410 fiche technique
Ordering number : ENA2007
TF410
SANYO Semiconductors
DATA SHEET
TF410
N-Channel Silicon Junction FET
Impedance Converter,
Infrared Sensor Applications
Applications
Impedance conversion, infrared sensor applications
Features
Ultrasmall package facilities miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm)
Small IGSS : max --500pA (VGSS= --20V, VDS=0V)
Small Ciss : typ. 0.7pF (VDS= 10V, VGS=0V, f=1MHz)
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGDS
IG
ID
PD
Tj
Tstg
Conditions
Ratings
40
--40
10
1
30
150
--55 to +150
Unit
V
V
mA
mA
mW
°C
°C
Package Dimensions
unit : mm (typ)
7055-003
0.6
0.2
3
0.11
0 to 0.02
1
0.175
2
0.15
1 2 1 : Source
2 : Drain
3 : Gate
3 SANYO : USFP
Product & Package Information
• Package
: USFP
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 10,000 pcs./reel
Packing Type: TL
Marking
3
BTL
Electrical Connection
3
1 : Source
2 : Drain
3 : Gate
1 2 Top view
12
http://semicon.sanyo.com/en/network
22912GB TKIM TC-00002703 No. A2007-1/3

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