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PDF AP4513GM-HF Data sheet ( Hoja de datos )
| Número de pieza | AP4513GM-HF | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP4513GM-HF (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Advanced Power
Electronics Corp.
AP4513GM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Performance
D2
D2
D1
D1
▼ RoHS Compliant & Halogen-Free
SO-8
N-CH
G2
S2
P-CH
G1
S1
Description
AP4513 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
35V
36mΩ
5.8A
-35V
68mΩ
-4.3A
D2
The SO-8 package is widely preferred for all commercial-
G1
G2
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
S1
applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
S2
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
EAS
IAR
EAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy4
Avalanche Current
Repetitive Avalanche Energy1
Storage Temperature Range
Operating Junction Temperature Range
35 -35
+20 +20
5.8 -4.3
4.7 -3.4
20 -20
2
0.016
12.5
12.5
5 -5
0.05
0.05
-55 to 150
-55 to 150
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201501095
1 page  
N-Channel
12
9
ID=5A
V DS = 28 V
6
3
0
0 4 8 12 16
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
1ms
10ms
1
0.1 T A =25 o C
Single Pulse
100ms
1s
10s
DC
0.01
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
AP4513GM-HF
f=1.0MHz
1000
C iss
100
C oss
C rss
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1 0.1
0.05
0.01
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.001
0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
10
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off)tf
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AP4513GM-HF.PDF ] | |
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