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PDF AP4525GEH-HF Data sheet ( Hoja de datos )
| Número de pieza | AP4525GEH-HF | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP4525GEH-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Good Thermal Performance
D1/D2
N-CH
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
S1 G1
S2
G2
P-CH
TO-252-4L
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G1
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G2
40V
28mΩ
15A
-40V
42mΩ
-12A
D2
S1 S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS
VGS
ID@TC=25℃
ID@TC=70℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
40 -40
±16 ±16
15.0 -12.0
12.0 -10.0
50 -50
10.4
0.083
V
V
A
A
A
W
W/℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
12
110
Unit
℃/W
℃/W
1
201501166
1 page  
N-Channel
12
I D =6A
V DS =20V
8
4
AP4525GEH-HF
f=1.0MHz
1000
C iss
C100 oss
C rss
0
0 5 10 15 20
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
10
100us
1
T A =25 o C
Single Pulse
0.1
0.1
1
1ms
10ms
100ms
1s
DC
10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1 0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
50
V DS =5V
40
T j =25 o C
30
T j =150 o C
20
10
0
0246
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
8
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 12. Gate Charge Waveform
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AP4525GEH-HF.PDF ] | |
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