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PDF AP4525GEH-A Data sheet ( Hoja de datos )
| Número de pieza | AP4525GEH-A | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP4525GEH-A
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
Description
D1/D2
N-CH
S1
G1
S2
G2
P-CH
TO-252-4L
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
40V
26mΩ
8.3A
-40V
40mΩ
-7A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
D1
G1
G2
D2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient3
S1
Rating
N-channel P-channel
40 -40
±16 ±16
8.3 -7.0
6.6 -5.6
50 -50
3.125
0.025
-55 to 150
-55 to 150
Max.
Max.
Value
8
40
S2
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
℃/W
Data and specifications subject to change without notice
200627071-1/7
1 page  
N-Channel
12
I D =6A
V DS =20V
8
4
AP4525GEH-A
f=1.0MHz
1000
C iss
C100
oss
C rss
0
0 5 10 15 20
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
1
0.1 T A =25 o C
Single Pulse
100us
1ms
10ms
100ms
1s
10s
0.01
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
50
V DS =5V
40
T j =25 o C
30
T j =150 o C
20
10
0
0246
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
8
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.0001
Single Pulse
0.001
0.01
0.1
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + TA
Rthja=75℃/W
1 10 100 1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 12. Gate Charge Waveform
5/7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AP4525GEH-A.PDF ] | |
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