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Numéro de référence | AP4532GM-HF | ||
Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
Fabricant | Advanced Power Electronics | ||
Logo | |||
Advanced Power
Electronics Corp.
AP4532GM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristic
D2
D2
D1
D1
▼ RoHS Compliant & Halogen-Free
SO-8
G2
S2
G1
S1
Description
AP4532 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
30V
50mΩ
5A
-30V
70mΩ
-4A
D2
The SO-8 package is widely preferred for all commercial-
G1
G2
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
S1
applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
S2
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
30 -30
+20 +20
5 -4
4 -3.2
20 -20
2
0.016
V
V
A
A
A
W
W/℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201501093
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Pages | Pages 12 | ||
Télécharger | [ AP4532GM-HF ] |
No | Description détaillée | Fabricant |
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