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PDF AP4537GYT-HF Data sheet ( Hoja de datos )
| Número de pieza | AP4537GYT-HF | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP4537GYT-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D1/D2 N-CH
▼ Good Thermal Performance
▼ Fast Switching Performance
▼
RoHS
Compliant
&
Halogen-Free
S1
G1
S2
G2
Description
PMPAK® 3x3
P-CH
AP4537 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
G1
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G2
The PMPAK ® 3x3 package is special for voltage conversion
application using standard infrared reflow technique with the
backside heat sink to achieve the good thermal performance.
S1
30V
30mΩ
7.3A
-30V
60mΩ
-5.3A
D2
S2
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
30 -30
+20 +20
7.3 -5.3
5.8 -4.2
28 -20
2.5
-55 to 150
-55 to 150
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
10
50
Unit
℃/W
℃/W
1
201410062AP
1 page  
N-Channel
8
ID=4A
V DS = 15 V
6
4
2
0
02468
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
AP4537GYT-HF
f=1.0MHz
500
400
300
C iss
200
100
C oss
C rss
0
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
10
Operation in this area
limited by RDS(ON)
1
0.1
T A =25 o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.01
0.01
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
. 0.1
0.05
0.02
0.01
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 90℃/W
Single Pulse
0.01
0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AP4537GYT-HF.PDF ] | |
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