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PDF AP4563GH-HF Data sheet ( Hoja de datos )
| Número de pieza | AP4563GH-HF | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP4563GH-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Good Thermal Performance
D1/D2
N-CH
▼ Fast Switching Performance
▼ RoHS Compliant
S1
G1 S2
G2
P-CH
Description
TO-252-4L
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
40V
30mΩ
8A
-40V
36mΩ
-7.3A
D2
G1 G2
S1
S2
Absolute Maximum Ratings@Tj=25oC.(unless otherwise specified)
Symbol
Parameter
Rating
N-channel
P-channel
VDS
VGS
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Drain Current , VGS @ 10V
Drain Current3 , VGS @ 10V
Drain Current3 , VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
40 -40
+20 +20
30 -27
8.0 -7.3
6.3 -5.9
40 -40
3.13
Linear Derating Factor
0.025
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c (N-CH)
Rthj-c (P-CH)
Rthj-a
Maximum Thermal Resistance, Junction-case3
Maximum Thermal Resistance, Junction-case3
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
3.2
3
40
Units
℃/W
℃/W
℃/W
1
201412194AP
1 page  
N-Channel
10
ID=8A
V DS = 32 V
8
6
4
2
0
0 5 10 15 20 25
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
AP4563GH-HF
f=1.0MHz
1600
1200
C iss
800
400
C oss
0 C rss
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
Operation in this
area limited by
10 RDS(ON)
100us
1ms
1 10ms
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
0.01
0.01
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1 0.1
0.05
. 0.02
0.01
Single Pulse
0.01
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + TA
Rthja=75℃/W
0.001
0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AP4563GH-HF.PDF ] | |
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