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Advanced Power Electronics - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP4578GH-HF
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP4578GH-HF fiche technique
Advanced Power
Electronics Corp.
AP4578GH-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Good Thermal Performance
Fast Switching Performance
RoHS Compliant & Halogen-Free
Description
S1 G1
S2
G2
D1/D2 N-CH
P-CH
TO-252-4L
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
D1
G1 G2
S1
60V
72mΩ
9A
-60V
125mΩ
-6A
D2
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Drain Current3
Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
60 -60
+25 +25
9 -6
6
30
8.9
-4
-30
0.07
V
V
A
A
A
W
W/
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case3
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
14
110
Units
/W
/W
1
201501164

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