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PDF AP4604P Data sheet ( Hoja de datos )
| Número de pieza | AP4604P | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP4604P (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Advanced Power
Electronics Corp.
AP4604P
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Ultra-low On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
D
S
Description
AP4604 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal
resistance and low package cost contribute to the worldwide
popular package.
BVDSS
RDS(ON)
ID3
40V
3.7mΩ
140A
G
D
S
TO-220(P)
Absolute
Symbol
Maximum
RatingPsa@ramTej=te2r 5oC. (unless
otherwise specified)
Rating
Units
VDS
VGS
ID@TC=25℃
ID@TC=25℃
ID@TC=100℃
IDM
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip)
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
40 V
+20 V
140 A
80 A
80 A
400 A
PD@TC=25℃
PD@TA=25℃
TSTG
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
150
2.4
-55 to 175
W
W
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
1
62
Units
℃/W
℃/W
1
201412181
1 page  
2
I D =1mA
1.6
1.2
0.8
0.4
0
-100 -50 0 50 100 150 200
T j , Junction Temperature ( o C)
Fig 13. Normalized BVDSS v.s. Junction
16
T j =25 o C
12
AP4604P
200
160
120
80
40
0
0 50 100 150
T C , Case Temperature( o C)
Fig 14. Total Power Dissipation
200
8
V GS =5.0V
4
V GS =6V
V GS =10V
.
0
0 20 40 60 80 100 120 140
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP4604P.PDF ] | |
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