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PDF AP4608P Data sheet ( Hoja de datos )

Número de pieza AP4608P
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP4608P Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP4608P
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Ultra-low On-resistance
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
D
S
Description
AP46048 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal
resistance and low package cost contribute to the worldwide
popular package.
BVDSS
RDS(ON)
ID3
40V
1.7mΩ
330A
G
D
S
TO-220(P)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=25
ID@TC=100
IDM
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), VGS @ 10V
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
40 V
+20 V
330 A
195 A
195 A
780 A
PD@TC=25
PD@TA=25
EAS
TSTG
TJ
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
333.3
2.4
288
-55 to 175
-55 to 175
W
W
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
0.45
62
Units
/W
/W
1
201412241

1 page




AP4608P pdf
10
T j =25 o C
8
6
V GS =5.0V
4
V GS =6V
2
V GS =10V
0
0 20 40 60 80 100 120 140
I D , Drain Current (A)
Fig 13. Typ. Drain-Source on State
Resistance
AP4608P
400
300
200
100
0
0 50 100 150
T C , Case Temperature( o C)
Fig 14. Total Power Dissipation
200
5

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