|
|
PDF AP4800GEM Data sheet ( Hoja de datos )
| Número de pieza | AP4800GEM | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AP4800GEM (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
Advanced Power
Electronics Corp.
AP4800GEM
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ Low On-resistance
▼ RoHS Compliant & Halogen-Free
D
D
D
D
SO-8
SG
S
S
Description
AP4800 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
BVDSS
RDS(ON)
ID
G
30V
18mΩ
9.2A
D
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
VDS
.Parameter
Drain-Source Voltage
Rating
30
Units
V
VGS Gate-Source Voltage
+20 V
ID@TA=25℃
ID@TA=70℃
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
9.2 A
7.3 A
IDM Pulsed Drain Current1
50 A
PD@TA=25℃
Total Power Dissipation
2.5 W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
50
Unit
℃/W
1
201408181
1 page  
AP4800GEM
2
I D =1mA
1.6
1.2
0.8
0.4
0
-100 -50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 13. Normalized BVDSS v.s. Junction
Temperature
80
T j =25 o C
60
V GS =3.0V
40
V GS =4.0V
20 4.5V
5.0V
V GS =10V
0
0 4 8 12 16 20 24
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
.
3.2
2.4
1.6
0.8
0
0 50 100
T A , Ambient Temperature( o C)
Fig 14. Total Power Dissipation
150
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP4800GEM.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AP4800GEM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |