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PDF AP4800N2 Data sheet ( Hoja de datos )
| Número de pieza | AP4800N2 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP4800N2 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Advanced Power
Electronics Corp.
AP4800N2
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ Small Size & Lower Profile
▼ Halogen Free & RoHS Compliant Product
G
Description
AP4800 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
D BVDSS
RDS(ON)
ID
30V
18mΩ
9A
S
D
D
G
Top view
D
D
S
D
D
D
S
S
DFN 2x2 D D G
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3 @ VGS=10V
Drain Current3 @ VGS=10V
Pulsed Drain Current1
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
30
+20
9
7.2
40
2.4
-55 to 150
-55 to 150
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
52
Unit
℃/W
1
201503171
1 page  
AP4800N2
2
I D =1mA
1.6
1.2
0.8
0.4
0
-100 -50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 13. Normalized BVDSS v.s. Junction
Temperature
50
T j =25 o C
40
30
.
20 4.5V
5.0V
V GS =10V
10
0
0 4 8 12 16 20 24
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
3.2
2.4
1.6
0.8
0
0 50 100
T A , Ambient Temperature( o C)
Fig 14. Total Power Dissipation
150
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP4800N2.PDF ] | |
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