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PDF AP4820AGYT-HF Data sheet ( Hoja de datos )

Número de pieza AP4820AGYT-HF
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP4820AGYT-HF Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP4820AGYT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Small Size & Lower Profile
D
RoHS Compliant & Halogen-Free
G
S
Description
AP4820A series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The PMPAK® 3x3 package is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
BVDSS
RDS(ON)
ID
30V
8.5mΩ
15A
D
D
D
D
S
S
S
G
PMPAK® 3x3
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
.Parameter
Rating
Units
VDS Drain-Source Voltage
30 V
VGS
ID@TA=25
ID@TA=70
IDM
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
+20 V
15 A
12 A
50 A
PD@TA=25
Total Power Dissipation
3.13 W
TSTG
Storage Temperature Range
-55 to 150
TJ Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
4
40
Unit
/W
/W
1
201501293

1 page




AP4820AGYT-HF pdf
MARKING INFORMATION
AP4820AGYT-HF
4820AGYT
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code : YT
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
.
5

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