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Toshiba - Silicon Epitaxial Planar Type Diode

Numéro de référence 1SS412
Description Silicon Epitaxial Planar Type Diode
Fabricant Toshiba 
Logo Toshiba 





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1SS412 fiche technique
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS412
General-Purpose Rectifier Applications
1SS412
Unit: imm
z Low forward voltage
z Low reverse current
z Small total capacitance
z Small package
: VF = 1.0 V (typ.)
: IR = 0.1 nA (typ.)
: CT = 3.0 pF (typ.)
: SC-70
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85 V
Reverse voltage
VR 80 V
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
IFM
IO
IFSM
P
300 *
100 *
1*
100
mA
mA
A
mW
Junction temperature
Storage temperature range
Tj 150 °C JEDEC
Tstg 55 to 150 °C JEITA
SC-70
Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA
1-2P1C
temperature/current/voltage and the significant change in
Weight: 0.006 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
(between cathode and anode)
Symbol
VF
IR
CT
Test
Circuit
Test Condition
IF = 100 mA
VR = 80 V
VR = 0, f = 1 MHz
Min Typ. Max Unit
1.0 1.3 V
0.1 10 nA
3.0 pF
Equivalent Circuit (Top View)
Marking
P9
Start of commercial production
2002-08
1 2014-03-01

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