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Número de pieza | 1SS417 | |
Descripción | Silicon Epitaxial Planar Type Diode | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 1SS417 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS417
1SS417
High Speed Switching Application
• Small package
• Low forward voltage: VF (3) = 0.56V (typ.)
• Low reverse current: IR = 5μA (Max.)
0.6±0.05
Unit: mm
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
0.2
±0.05
0.07 M A
0.1±0.05
Maximum (peak) reverse voltage
Reverse voltage
VRM
VR
45 V
40 V
0.48
+0.02
-0.03
Maximum (peak) forward current IFM 200 mA
Average forward current
IO 100 mA
Surge current (10ms)
IFSM
1A
Power dissipation
Junction temperature
P * 100 mW
fSC
Tj 125 °C
Storage temperature range
Operating temperature range
Tstg
−55~125
°C JEDEC
Topr
−40~100
°C JEITA
TOSHIBA
―
―
1-1L1A
Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.6mg(typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Mounted on a glass epoxy circuit board of 20 × 20 mm,
pad dimension of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 50mA
― VR = 40V
― VR = 0, f = 1MHz
Min Typ. Max Unit
― 0.28 ―
― 0.36 ―
V
― 0.56 0.62
― ― 5 μA
― 15 ― pF
Equivalent Circuit (Top View)
Marking
X
1 2007-11-01
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 1SS417.PDF ] |
Número de pieza | Descripción | Fabricantes |
1SS412 | Silicon Epitaxial Planar Type Diode | Toshiba |
1SS413 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE | SEMTECH |
1SS413 | Schottky Barrier Diode | Toshiba |
1SS413CT | Schottky Barrier Diode | Toshiba |
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