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PDF 1SS421 Data sheet ( Hoja de datos )
| Número de pieza | 1SS421 | |
| Descripción | Silicon Epitaxial Planar Type Diode | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 1SS421 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS421
1SS421
High-Speed Switching Application
Low forward voltage: VF (3) = 0.50V (max)
Abusolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
VR
IFM
IO
IFSM
P*
30 V
300 mA
200 mA
1A
150 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature range
Topr
−40 to 100
°C
*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
Cu pad dimension of 4 mm × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 1.4 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
Test
Circuit
Test Condition
― IF = 1 mA
― IF = 5 mA
― IF = 200 mA
― VR = 10 V
― VR = 30 V
― VR = 0, f = 1 MHz
Min Typ. Max Unit
― 0.18 ―
― 0.22 ―
― 0.44 0.5
V
― ― 20
μA
― ― 30
⎯ 19 ⎯ pF
Equivalent Circuit (top view)
Marking
S7
1
2008-02-02
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1SS421.PDF ] | |
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