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PDF 1SS420CT Data sheet ( Hoja de datos )

Número de pieza 1SS420CT
Descripción Silicon Epitaxial Planar Type Diode
Fabricantes Toshiba 
Logotipo Toshiba Logotipo



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No Preview Available ! 1SS420CT Hoja de datos, Descripción, Manual

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS420CT
High-Speed Switching Applications
Low reverse current: IR = 5 μA (max)
0.6±0.05
1SS420CT
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Maximum (peak) reverse voltage
Symbol
VRM
Rating
35
Unit
V
0.38
+0.02
-0.03
0.5±0.03
0.05±0.03
Reverse voltage
VR 30 V
Maximum (peak) forward current IFM 300 mA
Average forward current
Surge current (10 ms)
Power dissipation
IO
IFSM
P
200
1
150 *
mA
A
mW
Junction temperature
Storage temperature range
Tj 125 °C
Tstg
55 to 125
°C
CST2
Operating temperature range
Topr 40 to 100 °C JEDEC
* Mounted on a glass-epoxy circuit board of 20 mm × 20 mm,
JEITA
pad dimensions of 4 mm × 4 mm.
TOSHIBA
1-1P1A
Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.7 mg (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
IF = 1 mA
IF = 10 mA
IF = 200 mA
VR = 30 V
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
0.29
0.36
0.52 0.6
V
― ― 5 μA
20 pF
Equivalent Circuit (top view)
Marking
85
1 2009-01-08

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