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PDF MRF18060B Data sheet ( Hoja de datos )
| Número de pieza | MRF18060B | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF18060B/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications from frequencies up to
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for PCN–PCS/cellular radio and WLL
applications. Specified for GSM1930 – 1990 MHz.
• GSM Performance, Full Frequency Band (1930 – 1990 MHz)
Power Gain — 13 dB (Typ) @ 60 Watts (CW)
Efficiency — 45% (Typ) @ 60 Watts (CW)
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection: Class 2 Human Body Model, Class M3
Machine Model
• Ease of Design for Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts (CW) Output Power
• Excellent Thermal Stability
MRF18060B
MRF18060BS
60 W, 1.90 – 1.99 GHz, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 465–04, STYLE 1
(MRF18060B)
CASE 465A–04, STYLE 1
(MRF18060BS)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC > = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
+15, –0.5
180
1.03
– 65 to +150
200
Max
0.97
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©MMOotTorOolRa,OInLc.A19R99F DEVICE DATA
MRF18060B MRF18060BS
1
1 page  
TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD)
16
15
14 IDQ = 750 mA
13
500 mA
12
11 300 mA
10
100 mA
9
8
1
VDD = 26 Vdc
f = 1880 MHz
10
Pout, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus
Output Power
100
100
90
80 Pin = 5 W
70
60
2.5 W
50
40
30
20
10
0
18
1W
VDD = 26 Vdc
IDQ = 500 mA
20 22 24 26
VDD, SUPPLY VOLTAGE (VOLTS)
28
30
Figure 6. Output Power versus Supply Voltage
90
80 Pin = 6 W
70
60
50
40
30
20
10
0
1800
3W
1W
0.5 W
VDD = 26 Vdc
IDQ = 500 mA
1820 1840 1860 1880 1900
f, FREQUENCY (MHz)
Figure 7. Output Power versus Frequency
90 60
80 55
70
h
60
50 Pout
50
45
40
40 35
30 30
20
VDD = 26 Vdc
25
IDQ = 500 mA
10
f = 1880 MHz
20
0 15
01 2 3 4 5 6
Pin, INPUT POWER (WATTS)
Figure 8. Output Power and Efficiency
versus Input Power
15.0
14.5
14.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
1700
Gps
IRL VDD = 26 Vdc
IDQ = 500 mA
1800 1900 2000
f, FREQUENCY (MHz)
Figure 9. Wideband Gain and IRL
(at Small Signal)
0
–2
–4
–6
–8
–10
–12
–14
–16
–18
–20
2100
MOTOROLA RF DEVICE DATA
MRF18060B MRF18060BS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRF18060B.PDF ] | |
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