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Numéro de référence | MRF18060BS | ||
Description | RF Power Field Effect Transistors | ||
Fabricant | Motorola Semiconductors | ||
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1 Page
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF18060B/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications from frequencies up to
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for PCN–PCS/cellular radio and WLL
applications. Specified for GSM1930 – 1990 MHz.
• GSM Performance, Full Frequency Band (1930 – 1990 MHz)
Power Gain — 13 dB (Typ) @ 60 Watts (CW)
Efficiency — 45% (Typ) @ 60 Watts (CW)
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection: Class 2 Human Body Model, Class M3
Machine Model
• Ease of Design for Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts (CW) Output Power
• Excellent Thermal Stability
MRF18060B
MRF18060BS
60 W, 1.90 – 1.99 GHz, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 465–04, STYLE 1
(MRF18060B)
CASE 465A–04, STYLE 1
(MRF18060BS)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC > = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
+15, –0.5
180
1.03
– 65 to +150
200
Max
0.97
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©MMOotTorOolRa,OInLc.A19R99F DEVICE DATA
MRF18060B MRF18060BS
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Pages | Pages 8 | ||
Télécharger | [ MRF18060BS ] |
No | Description détaillée | Fabricant |
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