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PDF STGWA25H120F2 Data sheet ( Hoja de datos )
| Número de pieza | STGWA25H120F2 | |
| Descripción | Trench gate field-stop IGBT | |
| Fabricantes | STMicroelectronics | |
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STGW25H120F2,
STGWA25H120F2
Trench gate field-stop IGBT, H series
1200 V, 25 A high speed
Datasheet - production data
72
72ORQJOHDGV
Features
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 2.1 V (typ.) @ IC = 25 A
• 5 µs minimum short circuit withstand time at
TJ=150 °C
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
Figure 1. Internal schematic diagram
C (2)
G (1)
SC12850
E (3)
Applications
• Uninterruptible power supply
• Welding machines
• Photovoltaic inverters
• Power factor correction
• High frequency converters
Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the H series
of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of high
switching frequency converters. Moreover, a
slightly positive VCE(sat) temperature coefficient
and very tight parameter distribution result in
safer paralleling operation.
Order code
STGW25H120F2
STGWA25H120F2
Table 1. Device summary
Marking
Package
G25H120F2
TO-247
G25H120F2
TO-247 long leads
Packaging
Tube
Tube
March 2015
This is information on a product in full production.
DocID026003 Rev 4
1/17
www.st.com
17
1 page  
STGW25H120F2, STGWA25H120F2
Electrical characteristics
Table 6. Switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on) Turn-on delay time
tr Current rise time
(di/dt)on
td(off)
tf
Eon(1)
Eoff(2)
Turn-on current slope
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
VCE = 600 V, IC = 25 A,
RG = 10 Ω, VGE = 15 V,
see Figure 22
Ets Total switching losses
td(on) Turn-on delay time
tr Current rise time
(di/dt)on
td(off)
tf
Eon(1)
Eoff(2)
Turn-on current slope
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
VCE = 600 V, IC = 25 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 22
Ets Total switching losses
tsc
Short-circuit withstand time
VCE = 600 V, VGE = 15 V,
TJ = 150 °C,
1. Energy losses include reverse recovery of the external diode.
2. Turn-off losses include also the tail of the collector current.
- 29 - ns
- 12 - ns
- 1774 - A/µs
130 - ns
- 106 - ns
- 0.6 - mJ
- 0.7 - mJ
- 1.3 - mJ
- 27.5 - ns
- 13.5 - ns
- 1522 - A/µs
- 139 - ns
- 200 - ns
- 1.05 - mJ
- 1.65 - mJ
- 2.7 - mJ
5 - μs
DocID026003 Rev 4
5/17
5 Page 
STGW25H120F2, STGWA25H120F2
3 Test circuits
Figure 22. Test circuit for inductive load
switching
Test circuits
Figure 23. Gate charge test circuit
kk
AM01504v1
Figure 24. Switching waveform
VCE
VG
IC
Td(on)
Tr(Ion)
Ton
90%
10%
Tr(Voff)
Tcross
Td(off)
Toff
Tf
90%
10%
90%
10%
k
k
k
k
AM01505v1
AM01506v1
DocID026003 Rev 4
11/17
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet STGWA25H120F2.PDF ] | |
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