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ROHM Semiconductor - Bi direction ESD Protection Diode

Numéro de référence RSB36V
Description Bi direction ESD Protection Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RSB36V fiche technique
Data Sheet
Bi direction ESD Protection Diode
RSB36V
Applications
ESD Protection
Dimensions (Unit : mm)
1.25±0.1
0.1±0.1
    0.05
Land size figure (Unit : mm)
0.9MIN.
Features
1)Small mold type. (UMD2)
2)High reliability.
3)Bi-directionality.
UMD2
Constructions
Silicon epitaxial planer
0.3±0.05
0.7±0.2
    0.1
ROHM : UMD2
JEDEC : SOD-323
JEITA : SC-901A
dot (year week factory)
Structure
Taping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
0.3±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
1.40±0.1
4.0±0.1
φ1.05
Limits
200
150
55 to +150
Unit
mW
°C
°C
1.0±0.1
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Zener voltage
Reverse current
Junction capacitance
VZ 32.4
IR -
Ct -
- 39.6
- 0.1
- 30
* Zener voltage (Vz)shall be measured at 40ms after loading current.
Unit Conditions
V IZ=1mA
μA VR=27V
pF VR=0V , f=1MHz
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A

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