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PDF SSF10N60F Data sheet ( Hoja de datos )

Número de pieza SSF10N60F
Descripción N-Channel MOSFET
Fabricantes SILIKRON 
Logotipo SILIKRON Logotipo



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No Preview Available ! SSF10N60F Hoja de datos, Descripción, Manual

Main Product Characteristics:
VDSS
600V
RDS(on) 0.69ohm(typ.)
ID 10A
Features and Benefits:
TO220F
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150operating temperature
SSF10N60F
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=14.2mH
Avalanche Current @ L=14.2mH
Operating Junction and Storage Temperature Range
Max.
10
6
40
156
1.2
600
± 30
700
10
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.06.26
www.silikron.com
Version : 1.2
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SSF10N60F pdf
Typical electrical and thermal characteristics
SSF10N60F
Figure 5. Maximum Drain Current Vs. Case
Temperature
Case Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2013.06.26
www.silikron.com
Version : 1.2
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