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PDF SSF11NS60UF Data sheet ( Hoja de datos )
| Número de pieza | SSF11NS60UF | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | SILIKRON | |
| Logotipo |  |
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Main Product Characteristics:
VDSS
RDS(on)
ID
600V
0.32Ω (typ.)
11A
Features and Benefits:
Feathers:
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
TO-220F
SSF11NS60UF
Marking and pin
Assignment
Schematic diagram
Description:
The SSF11NS60UF series MOSFETs is a new technology, which combines an innovative super
junction technology and advance process. This new technology achieves low Rdson, energy saving,
high reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=133mH
Avalanche Current @ L=133mH
Operating Junction and Storage Temperature Range
Max.
11
7
44
31
0.25
600
± 30
250
1.94
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.05.28
www.silikron.com
Version : 1.0
page 1 of 8
1 page  
Typical electrical and thermal characteristics
SSF11NS60UF
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6. Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Drain-to-Source Voltage Vs. Gate-to-Source Voltage
©Silikron Semiconductor CO.,LTD.
2013.05.28
www.silikron.com
Version : 1.0
page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SSF11NS60UF.PDF ] | |
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