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PDF SSF5NS60UD Data sheet ( Hoja de datos )
| Número de pieza | SSF5NS60UD | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | SILIKRON | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSF5NS60UD (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Main Product Characteristics:
VDSS
RDS(on)
600V
0.73Ω (typ.)
ID 5A ①
Features and Benefits:
TO-252 (D-PAK)
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
SSF5NS60UD
Marking and pin
Assignment
Schematic diagram
Description:
The SSF5NS60UD series MOSFETs is a new technology, which combines an innovative super
junction technology and advance process. This new technology achieves low Rdson, energy saving,
high reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=60.1mH
Avalanche Current @ L=60.1mH
Operating Junction and Storage Temperature Range
Max.
5①
3.2 ①
15
39
0.31
600
± 30
101
1.84
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.06.08
www.silikron.com
Version : 1.0
page 1 of 8
1 page  
Typical electrical and thermal characteristics
SSF5NS60UD
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6. Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Drain-to-Source Voltage Vs. Gate-to-Source Voltage
Figure8. Maximum Effective Transient Thermal Impedance,
Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2013.06.08
www.silikron.com
Version : 1.0
page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SSF5NS60UD.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SSF5NS60UD | N-Channel MOSFET | SILIKRON |
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