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PDF SSF5NS70GB Data sheet ( Hoja de datos )

Número de pieza SSF5NS70GB
Descripción N-Channel MOSFET
Fabricantes SILIKRON 
Logotipo SILIKRON Logotipo



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No Preview Available ! SSF5NS70GB Hoja de datos, Descripción, Manual

Main Product Characteristics
VDSS
RDS(on)
700V
1.3Ω (typ.)
ID 5A
Features and Benefits
TO-251S
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
SSF5NS70GB
Marking and Pin
Assignment
Schematic Diagram
Description:
The SSF5NS70GB series MOSFETs is a new technology, which combines an innovative technology
and advance process. This new technology achieves low Rdson, energy saving, high reliability and
uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=22.4mH
Avalanche Current @ L=22.4mH
Operating Junction and Storage Temperature Range
Max.
5
3.1
15
50
0.4
700
± 30
54
2.2
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.03.14
www.silikron.com
Version : 1.0P
page 1 of 8

1 page




SSF5NS70GB pdf
Typical electrical and thermal characteristics
SSF5NS70GB
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6. Typical Capacitance Vs. Drain-to-Source
Voltage
©Silikron Semiconductor CO.,LTD.
2013.03.14
www.silikron.com
Version : 1.0P
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