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SSF6N70GM fiches techniques PDF

SILIKRON - N-Channel MOSFET

Numéro de référence SSF6N70GM
Description N-Channel MOSFET
Fabricant SILIKRON 
Logo SILIKRON 





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SSF6N70GM fiche technique
Main Product Characteristics:
VDSS
RDS(on)
700V
1.49Ω (typ.)
ID 6A
Features and Benefits:
IPAKM-S2
(Details in page6)
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150operating temperature
SSF6N70GM
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=20mH
Avalanche Current @ L=20mH
Operating Junction and Storage Temperature Range
Max.
6
3.8
24
113
0.91
700
± 30
313
5.6
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.06.14
www.silikron.com
Version : 1.0
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