DataSheetWiki


B5817WS fiches techniques PDF

Galaxy Semi-Conductor - Schottky Barrier Diode

Numéro de référence B5817WS
Description Schottky Barrier Diode
Fabricant Galaxy Semi-Conductor 
Logo Galaxy Semi-Conductor 





1 Page

No Preview Available !





B5817WS fiche technique
BL Galaxy Electrical
Production specification
Schottky Barrier Diode
FEATURES
z Extremely low VF.
z Low stored change,majority carrier
conduction.
z Low power loss/high efficient
Pb
Lead-free
B5817WS-B5819WS
APPLICATIONS
z For Use In Low Voltage, High Frequency Inverters.
z Free Wheeling, And Polarity Protection Applications.
ORDERING INFORMATION
Type No.
Marking
B5817WS
B5818WS
B5819WS
SJ
SK
SL
SOD-323
Package Code
SOD-323
SOD-323
SOD-323
MAXIMUM RATING @ Ta=25unless otherwise specified
Parameter
symbol B5817WS B5818WS B5819WS Unit
Non-Repetitive Peak reverse voltage
VRM
20
30
40
V
Peak repetitive Peak reverse voltage
VRRM
Working Peak Reverse voltage
VRWM
20
30
40
V
DC Reverse Voltage
VR
RMS Reverse Voltage
VR(RMS)
14
21
28
V
Average Rectified output Current
Io 1
A
Peak forward surge current@=8.3ms
IFSM
25
A
Repetitive Peak Forward Current
IFRM
625
mA
Power Dissipation
Pd 250
mW
Thermal Resistance Junction to Ambient RθJA
500
/W
Storage temperature
TSTG
-65~+150
Document number: BL/SSSKB009
Rev.A
www.galaxycn.com
1

PagesPages 4
Télécharger [ B5817WS ]


Fiche technique recommandé

No Description détaillée Fabricant
B5817W SCHOTTKY BARRIER DIODE JCET
JCET
B5817W SCHOTTKY DIODE Unisonic Technologies
Unisonic Technologies
B5817W SCHOTTKY DIODE Shunye
Shunye
B5817W Schottky Diode Taiwan Semiconductor
Taiwan Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche