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BZX55-C20 fiches techniques PDF

Taiwan Semiconductor - 500mW Zener Diode

Numéro de référence BZX55-C20
Description 500mW Zener Diode
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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BZX55-C20 fiche technique
Pb RoHS
COMPLIANCE
Features
— Fast switching speed
— General purpose rectification
— Silicon epitaxial planar construction
Mechanical Data
— Case: DO-35
— Leads:Solderableper MIL-STD-202,
Method 208
— Polarity: Cathode band
— Marking: Type number
— Weight: 0.13 grams (approx.)
BZX55C SERIES
500mW Zener Diode
DO-35
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 OC ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
Value
Units
Forward Voltage
@ IF = 100mA
VF
1.0
V
Power Dissipation (Note 1)
Pd 500 mW
Thermal Resistance Junction to Ambient Air (Note 2)
Operating and Storage Temperature Range
RθJA
TJ, TSTG
0.3
-65 to + 175
K /mW
OC
Notes: 1. Valid Provided that Lead are kept at ambient temperature at a distance of 8mm from case.
2. Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.
Version: A07

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