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PDF IXTB62N50L Data sheet ( Hoja de datos )
| Número de pieza | IXTB62N50L | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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LinearTM Power MOSFET
w/Extended FBSOA
IXTB62N50L
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
VDSS =
ID25 =
≤RDS(on)
500V
62A
100mΩ
PLUS264TM
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
Maximum Ratings
500 V
500 V
± 30 V
± 40 V
62 A
150 A
80 A
5J
800 W
-55 ... +150
°C
150 °C
-55 ... +150
°C
300 °C
260 °C
30..120/6.7..27
N/lb.
10 g
G
D
S
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z Fast Intrinsic Diode
z Avalanche Rated
z Low RDS(ON) and QG
z Low Package Inductance
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 20V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
500 V
3.0 5.5 V
± 200 nA
50 μA
1 mA
100 mΩ
Applications
z Programmable Loads
z DC-DC Converters
z Current Regulators
z Battery Chargers
z DC Choppers
z Temperature and Lighting
Controls
© 2011 IXYS CORPORATION, All Rights Reserved
DS99336B(11/11)
1 page  
IXTB62N50L
Fig. 13. Forward-Bias Safe Operating Area
@ TC = 25ºC
1000
Fig. 14. Forward-Bias Safe Operating Area
@ TC = 90ºC
1000
RDS(on) Limit
100
10
1
TJ = 150ºC
TC = 25ºC
Single Pulse
0.1
10
100
VDS - Volts
25µs
100µs
RDS(on) Limit
100
1ms
10ms
DC
1,000
10
1
0.1
10
TJ = 150ºC
TC = 90ºC
Single Pulse
100
VDS - Volts
25µs
100µs
1ms
10ms
DC
1,000
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_62N50L(9N) 11-04-11-B
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| PDF Descargar | [ Datasheet IXTB62N50L.PDF ] | |
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