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PDF IXTN30N100L Data sheet ( Hoja de datos )
| Número de pieza | IXTN30N100L | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Power MOSFETs with IXTB 30N100L
Extended FBSOA
IXTN 30N100L
N-Channel Enhancement Mode
Avalanche Rated
VDSS = 1000 V
ID25 = 30 A
≤RDS(on) 0.45 Ω
Symbol
VDSS
VDGR
V
GS
VGSM
ID25
IDM
IAR
EAR
EAS
P
D
TJ
TJM
Tstg
TL
V
ISOL
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
Maximum Ratings
IXTB
IXTN
PLUS264 (IXTB)
1000
1000
V
1000
1000
V
± 30
± 40
± 30
± 40
V
V
TC = 25°C
TC = 25°C,
Pulse width limited by T
JM
TC = 25°C
TC = 25°C
TC = 25°C
T = 25°C
C
30 30
70 70
30 30
80 80
2.0 2.0
800 800
-55 ... +150
150
-55 ... +150
AG
A
D
S
(TAB)
A miniBLOC, SOT-227 B (IXTN)
mJ E153432
S
J DG
W
°C G
°C
S
°C
S
D
S
1.6 mm (0.063 in) from case for 10 s
300
50/60 Hz, RMS t = 1 min
IISOL < 1 mA
t=1s
Mounting torque
Terminal connection torque
-
-
-
-
Mounting force
28..150 /6.4..30
PLUS264
SOT-227B
- °C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
- N/lb.
10 g
30 g
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• Designed for linear operation
• International standard packages
• Molding epoxies meet UL 94 V-0
flammability classification
• SOT-227B miniBLOC with aluminium
nitride isolation
Symbol
VDSS
VGS(th)
I
GSS
IDSS
RDS(on)
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 250 μA
V = ± 30 V , V = 0
GS DC DS
VDS = VDSS, VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 20 V, ID = 0.5 • ID25, Note 1
1000
3
V
5V
± 200 nA
50 μA
1 mA
0.45 Ω
Applications
• Programmable loads
• Current regulators
• DC-DC converters
• Battery chargers
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2006 IXYS All rights reserved
DS99501A(01/06)
1 page  
Fig. 12. Forward-Bias Safe Operating Area
@ TC = 25ºC
100
25µs
100µs
10
1ms
10ms
1
DC
TJ = 150ºC
0
10
100
VDS - Volts
1000
10000
IXTB 30N100L
IXTN 30N100L
Fig. 13. Forward-Bias Safe Operating Area
@ TC = 90ºC
100
10
1
TJ = 150ºC
0
10
25µs
100µs
1ms
10ms
DC
100
VDS - Volts
1000
10000
1.000
Fig. 14. Maximum Transient Thermal Resistance
0.100
0.010
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2006 IXYS All rights reserved
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTN30N100L.PDF ] | |
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