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What is IXFN280N085?

This electronic component, produced by the manufacturer "IXYS", performs the same function as "Power MOSFET ( Transistor )".


IXFN280N085 Datasheet PDF - IXYS

Part Number IXFN280N085
Description Power MOSFET ( Transistor )
Manufacturers IXYS 
Logo IXYS Logo 


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HiPerFETTM Power
MOSFETs Single Die
MOSFET
IXFN280N085
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IL(RMS)
IDM
IA
EAS
dV/dt
Pd
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C, Chip capability
External Lead Current Limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
50/60 Hz, RMS t = 1min
IISOL 1mA
t = 1s
Mounting torque
Terminal connection torque
Maximum Ratings
85
85
±20
±30
V
V
V
V
280
200
1120
A
A
A
200 A
4J
5 V/ns
700 W
-55 ... +150
150
-55 ... +150
2500
3000
1.5/13
1.3/11.5
30
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol
BVDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ
=
25°C, unless
Min.
otherwise specified)
Typ. Max.
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±20V, VDS = 0V
VDS = VDSS
VGS = 0V
TJ = 125°C
VGS = 10V, ID = 100A, Note 1
85
2.0
4.0
±200
100
2
4.4
V
V
nA
μA
mA
mΩ
VDSS = 85V
ID25 = 280A
RDS(on) 4.4mΩ
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
International standard package
miniBLOC, with Aluminium nitride
isolation
Low RDS(on) HDMOSTM process
Rugged polysilicon gate cell structure
Avalanche rated
Guaranteed FBSOA
Low package inductance
Fast intrinsic Rectifier
Advantages
Easy to mount
Space savings
High power density
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
© 2008 IXYS Corporation, All rights reserved
DS98747B(12/08)

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IXFN280N085 equivalent
10,000
Fig. 12. Forward-Bias Safe Operating Area
@ TC = 25ºC
IXFN280N085
10,000
Fig. 13. Forward-Bias Safe Operating Area
@ TC = 75ºC
RDS(on) Limit
1,000
100
External-Lead Limit
10
TJ = 150ºC
TC = 25ºC
Single Pulse
1
1
10
VDS - Volts
100µs
RDS(on) Limit
1,000
1ms
10ms
100ms
DC
100
100
External-Lead Limit
10
TJ = 150ºC
TC = 75ºC
Single Pulse
1
1
10
VDS - Volts
25µs
100µs
1ms
10ms
100ms
DC
100
© 2008 IXYS Corporation, All rights reserved
IXYS REF: F_280N085(9Y-N17)12-02-08-A


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Featured Datasheets

Part NumberDescriptionMFRS
IXFN280N085The function is Power MOSFET ( Transistor ). IXYSIXYS

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