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Toshiba Semiconductor - Silicon Diffused Type Zener Diode

Numéro de référence CMZ22
Description Silicon Diffused Type Zener Diode
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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CMZ22 fiche technique
Surge absorber
CMZ12 to CMZ51
TOSHIBA Zener Diode Silicon Diffused Type
CMZ12 to CMZ51
Unit: mm
Average power dissipation : P = 2 W
Zener voltage
: VZ = 12 to 51 V
Suitable for compact assembly due to small
surface mount package
“MFLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Power dissipation
Symbol Rating Unit
P 2 (Note 1) W
1. Anode
2. Cathode
Junction temperature
Tj 40 to 150 °C
Storage temperature range Tstg 40 to 150 °C
Note 1: Ta = 30°C
Device mounted on a ceramic board
Board size
: 50 mm × 50 mm
Land Pattern size : 2 mm × 2 mm
Board thickness : 0.64 mm
JEDEC
JEITA
TOSHIBA
Weight: 0.023 g (typ.)
3-4E1S
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Land Pattern Dimensions (for reference only)
Unit: mm
1.4 3.0
1.4
1
Start of commercial production
2002-10
2015-05-15

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