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MS12N60 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Bruckewell - N-Channel MOSFET

شماره قطعه MS12N60
شرح مفصل N-Channel MOSFET
تولید کننده Bruckewell 
آرم Bruckewell 


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MS12N60 شرح
MS12N60
N-Channel Enhancement Mode Power MOSFET
Description
The MS12N60 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
BVDSS=6600V typically @ Tj=150°C
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
Application
Ballast
Inverter
Packing & Order Information
Graphic symbol
50/Tube ; 1,000/Box x
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
ID
Drain Current -Continuous (TC=100°C)
IDM Pulsed Drain Current
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
IAR Avalanche Current
dV/dt
Peak Diode Recovery dV/dt
• Drain current limited by maximum junction temperature
Value
600
±30
12
7.2
48
870
22.5
12.0
3.5
Unit
V
V
A
A
A
mJ
mJ
A
V/ns
Publication Order Number: [MS12N60]
© Bruckewell Technology Corporation Rev. A -2014

قانون اساسیصفحه 6
دانلود [ MS12N60 دیتاشیت ]



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