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MS1336 fiches techniques PDF

Advanced Power Technology - RF & MICROWAVE TRANSISTORS

Numéro de référence MS1336
Description RF & MICROWAVE TRANSISTORS
Fabricant Advanced Power Technology 
Logo Advanced Power Technology 





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MS1336 fiche technique
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
Features
175 MHz
12.5 VOLTS
POUT = 30W MINIMUM
GP = 10 dB GAIN
COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor
designed primarily for Class C, VHF communication applications.
The MS1337 utilizes an emitter ballasted die geometry to
withstand severe load mismatch conditions.
MS1336
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO
VCEO
VCES
VEBO
IC
PDISS
TJ
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
TSTG
Storage Temperature
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
Value
36
18
36
4.0
8.0
70
+200
-65 to +150
1.2
Unit
V
V
V
V
A
W
°C
°C
° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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