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MS15N60 fiches techniques PDF

Bruckewell - N-Channel MOSFET

Numéro de référence MS15N60
Description N-Channel MOSFET
Fabricant Bruckewell 
Logo Bruckewell 





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MS15N60 fiche technique
MS15N60
N-Channel Enhancement Mode Power MOSFET
Description
The MS15N60 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
Application
Adapter
Switching Mode Power Supply
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage
ID
IDM
IAR
EAS
EAR
dV/dt
Drain Current -Continuous (TC=25°C)
Drain Current -Continuous (TC=100°C)
Drain Current -Pulsed
Avalanche Current
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dV/dt
TJ Storage Temperature
• Drain current limited by maximum junction temperature
Value
600
±30
15
9.5
60
15
245
24
9.8
150
Unit
V
V
A
A
A
A
mJ
mJ
V/ns
°C
Publication Order Number: [MS15N60]
© Bruckewell Technology Corporation Rev. A -2014

PagesPages 4
Télécharger [ MS15N60 ]


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