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PDF MS18N50 Data sheet ( Hoja de datos )
| Número de pieza | MS18N50 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Bruckewell | |
| Logotipo |  |
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MS18N50
500V N-channel MOSFET
Description
The MS18N50 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• Originative New Design
• Very Low Intrinsic Capacitances
• Excellent Switching Characteristics
• 100% EAS Test
• Extended Safe Operating Area
• RoHS compliant package
Application
• High current, High speed switching
• PFC (Power Factor Correction)
• SMPS (Switched Mode Power Supplies)
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
ID
Drain Current -Continuous (TC=100°C)
500 V
±30 V
18 A
10.8 A
IDM Drain Current -Pulsed
72 A
EAS Single Pulsed Avalanche Energy
990 mJ
EAR Repetitive Avalanche Energy
23.5 mJ
dV/dt
Peak Diode Recovery dV/dt
4.5 V/ns
TJ, Tstg
Operating Junction and Storage Temperature
-55~+150
°C
Power Dissipation (TC=25°C)
PD
Power Dissipation (TC=100°C)
238 W
1.8 W
• Drain current limited by maximum junction temperature
Publication Order Number: [MS18N50]
© Bruckewell Technology Corporation Rev. A -2014
1 page  
MS18N50
500V N-channel MOSFET
■Typical Electrical Characteristics
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MS18N50]
© Bruckewell Technology Corporation Rev. A -2014
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MS18N50.PDF ] | |
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