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PJD5NA80 fiches techniques PDF

Pan Jit International - 800V N-Channel MOSFET

Numéro de référence PJD5NA80
Description 800V N-Channel MOSFET
Fabricant Pan Jit International 
Logo Pan Jit International 





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PJD5NA80 fiche technique
PPJU5NA80 / PJD5NA80 / PJP5NA80 / PJF5NA80
800V N-Channel MOSFET
Voltage
800 V Current
5A
Features
RDS(ON), VGS@10V,ID@ 2.5A<2.7Ω
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: TO-251AA,TO-252AA ,TO-220AB, ITO-220AB-F Package
Terminals : Solderable per MIL-STD-750, Method 2026
TO-251AA Approx. Weight : 0.0104 ounces, 0.297grams
TO-252AA Approx. Weight : 0.0104 ounces, 0.297grams
TO-220AB Approx. Weight : 0.067 ounces, 2 grams
ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams
ITO-220AB-F
TO-220AB
TO-252AA
TO-251AA
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
SYMBOL TO-251AA
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
TC=25oC
Derate above 25oC
Operating Junction and
Storage Temperature Range
Typical Thermal resistance
- Junction to Case
- Junction to Ambient
VDS
VGS
ID
IDM
EAS
PD
TJ,TSTG
RθJC
RθJA
140
1.12
0.89
110
TO-220AB ITO-220AB-F TO-252AA UNITS
800
+30
5
20
323
146 48
1.17
0.38
140
1.12
V
V
A
A
mJ
W
W/ oC
-55~150
oC
0.86
2.6
0.89
oC/W
62.5 120 110
Limited only By Maximum Junction Temperature
March 10,2014-REV.00
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