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PDF DLA10IM800UC Data sheet ( Hoja de datos )

Número de pieza DLA10IM800UC
Descripción High Efficiency Standard Rectifier
Fabricantes IXYS 
Logotipo IXYS Logotipo



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High Efficiency Standard Rectifier
Single Diode
Part number
DLA10IM800UC
Marking on Product: MARLUI
1
3
2/4
DLA10IM800UC
VRRM
I FAV
VF
=
=
=
800 V
10 A
1.16 V
Backside: cathode
Features / Advantages:
Planar passivated chips
Very low leakage current
Very low forward voltage drop
Improved thermal behaviour
Applications:
Diode for main rectification
For single and three phase
bridge configurations
Package: TO-252 (DPak)
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130121b

1 page




DLA10IM800UC pdf
DLA10IM800UC
Rectifier
20
100
102
VR = 0 V
16
12
IF
8
[A]
4
TVJ = 150°C
TVJ = 125°C
TVJ = 25°C
80
IFSM
[A]
60
TVJ = 45°C
TVJ = 150°C
I2t
[A2s]
TVJ = 45°C
TVJ = 150°C
0
0.5 1.0 1.5
VF [V]
Fig. 1 Forward current versus
voltage drop
50 Hz, 80% VRRM
40
0.001
0.01
0.1
1
t [s]
Fig. 2 Surge overload current
101
1
2 3 4 5 6 7 8 910
t [ms]
Fig. 3 I2t versus time
16
14
12
10
Ptot
8
[W]
6
DC =
1
0.5
0.4
0.33
0.17
0.08
4
2
RthHA =
1.0 K/W
2.0 K/W
4.0 K/W
8.0 K/W
10.0 K/W
12.0 K/W
20
15
IF(AV)M
[A] 10
5
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0 2 4 6 8 10 12 0 25 50 75 100 125 150 175 200
0
0 50 100 150 200
IF(AV)M [A]
Tamb [°C]
TC [°C]
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 5 Max. forward current vs.
case temperature
2.0
1.5
ZthJC
1.0
[K/W]
0.5
Constants for ZthJC calculation:
i Rthi (K/W)
ti (s)
1 1.1
0.005
2 0.06
0.0003
3 0.14
0.045
4 0.2
0.2
5 0.5
0.05
0.0
1
10 100
t [ms]
Fig. 6 Transient thermal impedance junction to case
1000
10000
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130121b

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