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YG985C6R fiches techniques PDF

Fuji Electric - Low-Loss Fast Recovery Diode

Numéro de référence YG985C6R
Description Low-Loss Fast Recovery Diode
Fabricant Fuji Electric 
Logo Fuji Electric 





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YG985C6R fiche technique
YG985C6R
Low-Loss Fast Recovery Diode
http://www.fujisemi.com
FUJI Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item
Symbols
Repetitive peak reverse voltage
VRRM
Isolating voltage
Viso
Average output current
Io
Non-repetitive forward surge current**
Operating junction temperature
Storage temperature
Note* Out put current of center tap full wave connection.
Note** Rating per element
IFSM
Tj
Tstg
Conditions
-
Terminals-to-case, AC.1min
50Hz Square wave duty =1/2
Tc = 60˚C
Sine wave, 10ms 1shot
-
-
Ratings
600
1500
20*
50
150
-40 to +150
Units
V
V
A
A
˚C
˚C
Electrical characteristics
Item
Forward voltage***
Reverse current***
Reverse recovery time***
Thermal resistance
Note*** Rating per element
(at Ta=25˚C unless otherwise specified.)
Symbols
Conditions
VF IF =10 A
IR VR =VRRM
trr IF =0.1A, IR =0.2A, Irec =0.05A
Rth(j-c) Junction to case
Maximum
3.0
30
0.028
1.75
Units
V
µA
µS
˚C/W
Mechanical characteristics
Item
Mounting torque
Approximate mass
Conditions
Recommended torque
-
Maximum
0.3 to 0.5
1.7
Units
N•m
g
1

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