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Número de pieza | DHG10I1200PM | |
Descripción | High Performance Fast Recovery Diode | |
Fabricantes | IXYS | |
Logotipo | ||
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No Preview Available ! Sonic-FRD
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
DHG 10 I 1200PM
advanced
VRRM =
IFAV =
t rr =
1200 V
10 A
75 ns
Part number
DHG 10 I 1200PM
31
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Backside: isolated
Package:
TO-220FPAC
● Industry standard outline
● Plastic overmolded tab for
electrical isolation
● Epoxy meets UL 94V-0
● RoHS compliant
Symbol
VRRM
IR
VF
I FAV
VF0
rF
R thJC
TVJ
Ptot
I FSM
I RM
t rr
CJ
EAS
IAR
Definition
Conditions
max. repetitive reverse voltage
reverse current
forward voltage
VR = 1200 V
VR = 1200 V
IF = 10 A
IF = 20 A
TVJ = 25 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
average forward current
IF = 10 A
IF = 20 A
rectangular, d = 0.5
threshold voltage
slope resistance
for power loss calculation only
TVJ = 125 °C
TC = 30 °C
TVJ = 150 °C
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
junction capacitance
non-repetitive avalanche energy
repetitive avalanche current
tp = 10 ms (50 Hz), sine
IF = 10 A;
-di /dt = 350 A/µs
F
VR = 800 V
VR = 600 V; f = 1 MHz
I AS = tbd A; L = 100 µH
VA = 1.5·VR typ.; f = 10 kHz
TC = 25 °C
TVJ = 45 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 25 °C
Ratings
min. typ. max.
1200
15
1.5
2.69
3.56
2.38
3.33
10
1.60
73.6
4.00
-55 150
31
70
8.5
75
tbd
tbd
tbd
Unit
V
µA
mA
V
V
V
V
A
V
mΩ
K/W
°C
W
A
A
A
ns
ns
pF
mJ
A
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
* Data according to IEC 60747and per diode unless otherwise specified
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet DHG10I1200PM.PDF ] |
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