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PDF DPF30I300PA Data sheet ( Hoja de datos )
| Número de pieza | DPF30I300PA | |
| Descripción | High Performance Fast Recovery Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DPF30I300PA
31
DPF30I300PA
VRRM
I FAV
t rr
=
=
=
300 V
30 A
55 ns
Backside: cathode
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package: TO-220
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101b
1 page  
DPF30I300PA
Fast Diode
1.2
80
60
IF
40
[A]
20
TVJ = 150°C
25°C
1.0
0.8
Qrr
0.6
[μC]
0.4
IF = 60 A
30 A
15 A
0.2
TVJ = 125°C
VR = 200 V
0
0.0 0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current
IF versus VF
2.0
0.0
0
Fig. 2
200 400 600
-diF /dt [A/μs]
Typ. reverse recov. charge
Qrr versus -diF /dt
24
20
16
IRM
12
[A]
8
IF = 60 A
30 A
15 A
4 TVJ = 125°C
VR = 200 V
0
0 200 400 600
-diF /dt [A/μs]
Fig. 3 Typ. reverse recovery current
IRM versus -diF /dt
1.4
120
1000
10
TVJ = 125°C
tfr
VFR
1.2 110 VR = 200 V
800 8
100
1.0
0.8
Kf
0.6
IRM
0.4
0.2 Qrr
0.0
0
40 80 120 160
TVJ [°C]
Fig. 4 Typ. dynamic parameters
Qrr, IRM versus TVJ
90
trr
80
tfr 600
6 VFR
[ns]
70
60
50
IF = 60 A
30 A
15 A
[ns] 400
200
TVJ = 125°C
VR = 200 V
IF = 30 A
4 [V]
2
40
0 200 400 600
-diF /dt [A/μs]
00
0 200 400 600
-diF /dt [A/μs]
Fig. 5 Typ. reverse recovery time
trr versus -diF /dt
Fig. 6 Typ. forward recov. voltage VFR
& recovery time tfr vs. diF /dt
40 1.0
30
Erec
20
[μJ]
IF = 60 A
30 A
15 A
0.8
0.6
ZthJC
0.4
[K/W]
10
TVJ = 125°C
0.2
VR = 200 V
0
0 200 400 600
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
0.0
10-3
10-2
10-1
100
t [s]
Fig. 8 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
101
20131101b
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DPF30I300PA.PDF ] | |
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