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PDF DPG30IM300PC Data sheet ( Hoja de datos )
| Número de pieza | DPG30IM300PC | |
| Descripción | High Performance Fast Recovery Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DPG30IM300PC
1
3
2/4
DPG30IM300PC
VRRM
I FAV
t rr
=
=
=
300 V
30 A
35 ns
Backside: cathode
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package: TO-263 (D2Pak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125b
1 page  
DPG30IM300PC
Fast Diode
80
70
60
50
IF
40
[A] 30
TVJ = 150°C
0.4 IF = 60 A
30 A
15 A
0.3
Qrr
0.2
[μC]
20 0.1
25°C
10
TVJ = 125°C
VR = 200 V
0.0 0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current
IF versus VF
2.0
0 200 400 600
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
16
14
12
10
IRM
8
[A] 6
IF = 60 A
30 A
15 A
4
2
TVJ = 125°C
VR = 200 V
0 200 400 600
-diF /dt [A/μs]
Fig. 3 Typ. reverse recov. current
IRM versus -diF /dt
1.4 70 600 12
1.2
60
TVJ = 125°C
VR = 200 V
tfr
500
VFR
10
1.0
Kf 0.8
0.6
IRM
0.4
trr 50
[ns]
40
IF = 60 A
30 A
15 A
30
0.2 Qrr
0
40
80 120 160
TVJ [°C]
Fig. 4 Typ. dynamic parameters
Qrr, IRM versus TVJ
20
0 200 400 600
-diF /dt [A/μs]
Fig. 5 Typ. reverse recov. time
trr versus -diF /dt
400
tfr
300
[ns]
200
8
VFR
6
[V]
4
100
0
0
TVJ = 125°C
VR = 200 V
IF = 30 A
200 400
2
0
600
-diF /dt [A/μs]
Fig. 6 Typ. forward recov. voltage
VFR & tfr versus diF /dt
16
14
TVJ = 125°C
VR = 200 V
12
10
Erec
8
IF = 15 A
30 A
60 A
[μJ] 6
4
2
0 200 400 600
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
1
ZthJC
[K/W]
0.1
0.001
0.01
0.1
t [s]
Rthi [K/W]
0.139
0.176
0.305
0.23
ti [s]
0.00028
0.0033
0.028
0.17
1 10
Fig. 8 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125b
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DPG30IM300PC.PDF ] | |
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