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PDF DPF60C300HB Data sheet ( Hoja de datos )
| Número de pieza | DPF60C300HB | |
| Descripción | High Performance Fast Recovery Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPF60C300HB
1 23
DPF60C300HB
VRRM
I FAV
t rr
= 300 V
= 2x 30 A
= 55 ns
Backside: cathode
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package: TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
1 page  
DPF60C300HB
Fast Diode
80
60
IF
40
[A]
20
TVJ = 150°C
25°C
0
0.0 0.4 0.8 1.2
VF [V]
Fig. 1 Forward current
IF versus VF
1.2
TVJ = 125°C
VR = 200 V
1.0
Qrr 0.8
[μC] 0.6
60 A
30 A
15 A
0.4
0.2
1.6 0 200 400 600
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
24
22
TVJ = 125°C
VR = 200 V
20
18
IRM 16
60 A
30 A
15 A
14
[A]
12
10
8
6
0
Fig. 3
200 400 600
-diF /dt [A/μs]
Typ. reverse recov. current
IRM versus -diF /dt
1.4
1.2
1.0
0.8
Kf
0.6
IRM
0.4
0.2 Qrr
0.0
0
40 80 120 160
TVJ [°C]
Fig. 4 Typ. dynamic parameters
Qrr, IRM versus TVJ
110
TVJ = 125°C
100 VR = 200 V
90
trr 80
[ns]
70
60 A
30 A
60
15 A
50
0 200 400 600
-diF /dt [A/μs]
Fig. 5 Typ. reverse recov.time
trr versus -diF /dt
1000
800
tfr
10
VFR
8
tfr 600
[ns] 400
6
VFR
4 [V]
200 TVJ = 125°C
VR = 200 V
IF = 30 A
0
0 200
400
2
0
600
-diF /dt [A/μs]
Fig. 6 Typ. forward recovery voltage
VFR & time tfr versus diF /dt
40
TVJ = 125°C
VR = 200 V
30
Erec
20
[μJ]
10
1.2
60 A
1.0
30 A
0.8
15 A
ZthJC
0.6
[K/W]
0.4
0.2
0
0 200 400 600
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
0.0
101
102
t [s]
103
Fig. 8 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
104
20131101a
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DPF60C300HB.PDF ] | |
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