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PDF DPG60C300HJ Data sheet ( Hoja de datos )

Número de pieza DPG60C300HJ
Descripción High Performance Fast Recovery Diode
Fabricantes IXYS 
Logotipo IXYS Logotipo



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HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG60C300HJ
1 23
DPG60C300HJ
VRRM
I FAV
t rr
= 300 V
= 2x 30 A
= 35 ns
Backside: isolated
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Package: ISOPLUS247
Isolation Voltage: 3600 V~
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
Soldering pins for PCB mounting
Backside: DCB ceramic
Reduced weight
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125a

1 page




DPG60C300HJ pdf
DPG60C300HJ
Fast Diode
80 0.6
70
60
IF 50
40
[A]
30
TVJ = 150°C
0.5 IF = 60 A
30 A
15 A
Qrr 0.4
[μC] 0.3
20
25°C
10
0.0 0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current
IF versus VF
2.0
0.2
0.1
0
Fig. 2
TVJ = 125°C
VR = 200 V
200 400 600
-diF /dt [A/μs]
Typ. reverse recov. charge
Qrr versus -diF /dt
18
16
14
12
IRM
10
[A]
8
IF = 60 A
30 A
15 A
6
4
0
Fig. 3
TVJ = 125°C
VR = 200 V
200 400 600
-diF /dt [A/μs]
Typ. reverse recov. current
IRM versus -diF /dt
1.4
1.2
1.0
Kf 0.8
0.6 IRM
0.4
80
70
trr 60
[ns] IF = 60 A
50 30 A
15 A
TVJ = 125°C
VR = 200 V
700
tfr
600
500
tfr
400
[ns]
300
200
7
VFR
6
TVJ = 125°C
VR = 200 V
IF = 30 A
5
VFR
4
[V]
3
2
Qrr
0.2
0
40
80 120 160
TVJ [°C]
Fig. 4 Typ. dynamic parameters
Qrr, IRM versus TVJ
40
0 200 400 600
-diF /dt [A/μs]
Fig. 5 Typ. reverse recov. time
trr versus -diF /dt
100
0
1
200 400 600
-diF /dt [A/μs]
Fig. 6 Typ. forward recov. voltage
VFR & time tfr versus diF /dt
12
TVJ = 125°C
10 VR = 200 V
1.2
1.0
8
Erec
6
[μJ]
4
IF = 60 A
30 A
15 A
0.8
ZthJC
0.6
[K/W]
0.4
2 0.2
0
0 200 400 600
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
0.0
1
10 100 1000
t [ms]
Fig. 8 Transient thermal impedance junction to case
10000
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125a

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