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PDF DSEP12-12AZ Data sheet ( Hoja de datos )
| Número de pieza | DSEP12-12AZ | |
| Descripción | High Performance Fast Recovery Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFRED
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DSEP12-12AZ
1
3
4
DSEP12-12AZ
VRRM = 1200 V
I FAV
=
12 A
trr = 40 ns
Backside: cathode
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package: TO-263 (D2Pak-HV)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131029a
1 page  
DSEP12-12AZ
Fast Diode
40
35
30
IF 25
20
[A]
15
TVJ = 25°C
100°C
150°C
10
5
0
0123
VF [V]
Fig. 1 Forward current
IF versus VF
3.0
T = 100°C
VJ
V = 600 V
R
2.5
2.0
Qr
1.5
[μC]
1.0
IF = 30 A
15 A
7.5 A
0.5
50
T = 100°C
VJ
V = 600 V
R
40
IRM 30
[A] 20
IF = 30 A
15 A
7.5 A
10
0.0
4 100
1000
0
0 200 400 600 800 1000
-diF /dt [A/μs]
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qr versus -diF /dt
Fig. 3 Typ. peak reverse current
IRM versus -diF /dt
2.0 180
T = 100°C
VJ
V = 600 V
R
1.5 160
Kf 1.0
I
RM
0.5
Q
r
trr
140
[ns]
120
IF = 30 A
15 A
7.5 A
0.0
0
40 80 120 160
TVJ [°C]
Fig. 4 Dynamic parameters
Qr, IRM versus TVJ
100
0 200 400 600 800 1000
-diF /dt [A/μs]
Fig. 5 Typ. recovery time
trr versus -diF /dt
120
80
VFR
[V]
40
T = 100°C
VJ
IF = 15 A
1.2
0.8
tfr
[μs]
0.4
V
FR
t
fr
0 0.0
0 200 400 600 800 1000
-diF /dt [A/μs]
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF /dt
10
1
ZthJC
0.1
[K/W]
0.01
Constants for ZthJC calculation:
i Rthi (K/W)
ti (s)
1 0.9084
0.0052
2 0.3497
0.0003
3 0.3419
0.0165
0.001
0.00001
0.0001
0.001
0.01
t [s]
Fig. 7 Transient thermal impedance junction to case
0.1
1
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131029a
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DSEP12-12AZ.PDF ] | |
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