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PDF DSEP30-12A Data sheet ( Hoja de datos )
| Número de pieza | DSEP30-12A | |
| Descripción | Epitaxial Diode | |
| Fabricantes | IXYS | |
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HiPerFREDTM Epitaxial Diode
with soft recovery
DSEP 30-12A
DSEP 30-12AR
IFAV = 30 A
VRRM = 1200 V
trr = 40 ns
VRSM
V
1200
1200
VRRM
V
Type
1200 DSEP 30-12A
1200 DSEP 30-12AR
TO-247 AD
ISOPLUS 247TM
A C Version A
Version AR
CC
AA
C (TAB)
A = Anode, C = Cathode
TAB
Symbol
Conditions
Maximum Ratings
IFRMS
IFAVM
rectangular, d = 0.5; TC (Vers. A) = 115°C
TC (Vers. AR)= 110°C
IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine
EAS TVJ = 25°C; non-repetitive
IAS = 11.5 A; L = 180 µH
IAR VA = 1.25·VR typ.; f = 10 kHz; repetitive
TVJ
TVJM
Tstg
Ptot TC = 25°C
Md * mounting torque
FC mounting force with clip
VISOL **
50/60 Hz RMS; IISOL ≤ 1 mA; leads-to-tab
Weight
typical
* Version A only; ** Version AR only
70
30
200
14
1.2
-55...+175
175
-55...+150
165
0.8...1.2
20...120
2500
6
A
A
A
mJ
A
°C
°C
°C
W
Nm
N
V~
g
Symbol
Conditions
Characteristic Values
typ. max.
IR ①
TVJ = 25°C; VR = VRRM
TVJ = 150°C; VR = VRRM
VF ②
IF = 30 A; TVJ = 150°C
TVJ = 25°C
RthJC
RthCH
Version A
Version AR
trr IF = 1 A; -di/dt = 200 A/µs;
VR = 30 V; TVJ = 25°C
IRM VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs
TVJ = 100°C
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0%
② Pulse Width = 300 µs, Duty Cycle < 2.0%
250
1
1.79
2.74
0.9
1.1
0.25
40
8.5 11.4
µA
mA
V
V
K/W
K/W
K/W
ns
A
Data according to IEC 60747 and per diode unless otherwise specified.
Features
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low IRM-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
• Version ..R isolated and
UL registered E153432
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low EMI/RFI
• Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
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